Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

T.F. Chang; T.C. Hsiao; C.F. Huang; C.W. Chiu; T.Y. Yang; T.Y. Huang; Y.C. Liang; G. Samudra

doi:https://doi.org/10.7567/SSDM.2014.PS-6-7

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-7] Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

T.F. Chang¹, T.C. Hsiao¹, C.F. Huang¹, C.W. Chiu², T.Y. Yang², T.Y. Huang², Y.C. Liang³, G. Samudra³ (1.Nat'l Tsing Hua Univ., 2.Richtek Tech. Corp., 3.Nat'l Univ. of Singapore (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-6-7

▲