Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

T.F. Chang; T.C. Hsiao; C.F. Huang; C.W. Chiu; T.Y. Yang; T.Y. Huang; Y.C. Liang; G. Samudra

doi:https://doi.org/10.7567/SSDM.2014.PS-6-7

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-7] Observation of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

T.F. Chang¹、T.C. Hsiao¹、C.F. Huang¹、C.W. Chiu²、T.Y. Yang²、T.Y. Huang²、Y.C. Liang³、G. Samudra³ (1.Nat'l Tsing Hua Univ.、2.Richtek Tech. Corp.、3.Nat'l Univ. of Singapore (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-6-7

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