Study of HfO<sub>2</sub>/AlGaN/GaN MOS-HEMT for High Power Application

W.C. Lan; P.C. Chin; Y.C. Lin; J.S. Maa; E.Y. Chang

doi:https://doi.org/10.7567/SSDM.2014.PS-6-8

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-6-8] Study of HfO₂/AlGaN/GaN MOS-HEMT for High Power Application

W.C. Lan¹, P.C. Chin¹, Y.C. Lin², J.S. Maa³, E.Y. Chang^2,4 (1.1Inst. of Photonic System, NCTU, 2.2Inst. of Materials Sci. and Eng.,NCTU, 3.Inst. of Lighting and Energy Photonics NCTU, 4.Inst. of Electronics Engineering, NCTU (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-6-8

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2014 International Conference on Solid State Devices and Materials

[PS-6-8] Study of HfO2/AlGaN/GaN MOS-HEMT for High Power Application

[PS-6-8] Study of HfO₂/AlGaN/GaN MOS-HEMT for High Power Application