The Japan Society of Applied Physics

[PS-6-8] Study of HfO2/AlGaN/GaN MOS-HEMT for High Power Application

W.C. Lan1、P.C. Chin1、Y.C. Lin2、J.S. Maa3、E.Y. Chang2,4 (1.1Inst. of Photonic System, NCTU、2.2Inst. of Materials Sci. and Eng.,NCTU、3.Inst. of Lighting and Energy Photonics NCTU、4.Inst. of Electronics Engineering, NCTU (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-6-8