[PS-6-8] Study of HfO₂/AlGaN/GaN MOS-HEMT for High Power Application

W.C. Lan¹、P.C. Chin¹、Y.C. Lin²、J.S. Maa³、E.Y. Chang^2,4 (1.1Inst. of Photonic System, NCTU、2.2Inst. of Materials Sci. and Eng.,NCTU、3.Inst. of Lighting and Energy Photonics NCTU、4.Inst. of Electronics Engineering, NCTU (Taiwan))

https://doi.org/10.7567/SSDM.2014.PS-6-8