Effects of Annealing on In-Ga-Zn-Oxide Films

K. Okazaki; H. Kanemura; Y. Hosaka; T. Obonai; M. Oota; M. Takahashi; S. Nishino; S. Yamazaki

doi:https://doi.org/10.7567/SSDM.2014.PS-8-10

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[PS-8-10] Effects of Annealing on In-Ga-Zn-Oxide Films

K. Okazaki¹、H. Kanemura¹、Y. Hosaka¹、T. Obonai¹、M. Oota²、M. Takahashi²、S. Nishino²、S. Yamazaki² (1.Advanced Film Device Inc.、2.Semiconductor Energy Lab. Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.PS-8-10

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