A self-aligned Ge/SiO2/Si0.4Ge0.6 gate-stacking heterostructure generated in a single fabrication step

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

W.-T. Lai¹, K.-C. Yang¹, T.-C. Hsu¹, P.-H. Liao¹, T. George², P.-W. Li¹ (1.National Central Univ., 2.Private Consultant (Taiwan))