14:30 〜 14:45
[A-1-2] High Power and High Temperature Operation over 3W/85°C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology
○S. Nozaki1, S. Yoshida2, K. Yamanaka2, O. Imafuji1, S. Takigawa1, T. Katayama1, T. Tanaka1
(1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.(Japan))
https://doi.org/10.7567/SSDM.2015.A-1-2