High Power and High Temperature Operation over 3W/85&#176;C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology

S. Nozaki

doi:https://doi.org/10.7567/SSDM.2015.A-1-2

2:30 PM - 2:45 PM

[A-1-2] High Power and High Temperature Operation over 3W/85°C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology

^○S. Nozaki¹, S. Yoshida², K. Yamanaka², O. Imafuji¹, S. Takigawa¹, T. Katayama¹, T. Tanaka¹ (1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.A-1-2

2015 International Conference on Solid State Devices and Materials

[A-1-2] High Power and High Temperature Operation over 3W/85°C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology