10:00 〜 10:15

[A-3-4] Suppression of Void Generation in Direct Wafer Bonding for Si High-k MOS Optical Modulators using Al₂O₃/HfO₂ Bonding Interface

^○J. H. Han^{1, 2}, M. Takenaka^{1, 2}, S. Takagi^{1, 2} (1.Univ. of Tokyo, 2.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2015.A-3-4