16:25 〜 16:40
[A-4-3] Low Dark Current Ge Photodetector with Selectively Grown Si Capping Layer
○S. Okumura1, K. Kinoshita1, J. Fujikata1, T. Simoyama1, H. Ono1, Y. Tanaka1, K. Morito1, T. Horikawa1, T. Mogami1
(1.PETRA(Japan))
https://doi.org/10.7567/SSDM.2015.A-4-3