4:25 PM - 4:40 PM

[A-4-3] Low Dark Current Ge Photodetector with Selectively Grown Si Capping Layer

^○S. Okumura¹, K. Kinoshita¹, J. Fujikata¹, T. Simoyama¹, H. Ono¹, Y. Tanaka¹, K. Morito¹, T. Horikawa¹, T. Mogami¹ (1.PETRA(Japan))

https://doi.org/10.7567/SSDM.2015.A-4-3