Novel Integration of Ultra-thin Al<sub>2</sub>O<sub>3</sub> with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

L. Zhang

doi:https://doi.org/10.7567/SSDM.2015.E-6-4

10:10 AM - 10:30 AM

[E-6-4] Novel Integration of Ultra-thin Al₂O₃ with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

^○L. Zhang^1,2, H. Y. Li¹, Y. Shang², W. Yoo³, H. Yu², C. S. Tan² (1.Institute of Microelectronics, A*STAR, 2.Nanyang Technological Univ., 3.WaferMasters, Inc(Singapore))

https://doi.org/10.7567/SSDM.2015.E-6-4

2015 International Conference on Solid State Devices and Materials

[E-6-4] Novel Integration of Ultra-thin Al2O3 with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV

[E-6-4] Novel Integration of Ultra-thin Al₂O₃ with Low-k Dielectric as Bi-layer Liner for Capacitance Optimization and Stress Mitigation in Cu-TSV