9:30 AM - 9:45 AM

[G-3-3] Characteristics of Highly Stacked InAs Quantum-dot Laser Grown on Vicinal (001)InP Substrate

^○K. Akahane¹, N. Yamamoto¹, T. Umezawa¹, A. Matsumoto¹, T. Kawanishi^1,2 (1.NICT, 2.Waseda Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.G-3-3