16:20 〜 16:35

[J-2-2] 4H-SiC Vertical Gate Trench with a Well-Controlled Shape Uniformly Formed by High Rate Etching and Annealing with Solid Source

^○H. Kitai¹, H. Shiomi¹, H. Tamaso¹, K. Fukuda¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.J-2-2