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[J-6-3] Effect of Nitridation for SiO₂/SiC Interface on Defects Properties near Conduction Band Edge

^○W. Takeuchi¹, K. Yamamoto², M. Sakashita¹, T. Kanemura², O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ., 2.DENSO Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.J-6-3