The Japan Society of Applied Physics

2:50 PM - 3:10 PM

[K-1-3] Steep Subthreshold Swing Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Nonlinear Gate Dielectric Insulators

H. Ota1,3, S. Migita1,3, K. Fukuda1, A. Toriumi2,3 (1.AIST, 2.Univ. of Tokyo, 3.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2015.K-1-3