14:50 〜 15:10

[K-1-3] Steep Subthreshold Swing Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Nonlinear Gate Dielectric Insulators

^○H. Ota^1,3, S. Migita^1,3, K. Fukuda¹, A. Toriumi^2,3 (1.AIST, 2.Univ. of Tokyo, 3.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2015.K-1-3