15:10 〜 15:30

[K-1-4] Variation Analysis for Ultra-Low Voltage 8T Tunnel FET SRAM Using Closed-Form Analytical Model of Static Noise Margin

^○H. Fuketa¹, S. O'uchi¹, K. Fukuda¹, T. Mori¹, Y. Morita¹, M. Masahara¹, T. Matsukawa¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.K-1-4