17:15 〜 17:35

[K-2-4] Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction

^○K. Tomioka^1,2, F. Ishizaka¹, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ., 2.JST-PRESTO(Japan))

https://doi.org/10.7567/SSDM.2015.K-2-4