Effect of 3D Current Distribution in the Characterizing Parasitic Resistance of FinFETs

P. Y. Lin

doi:https://doi.org/10.7567/SSDM.2015.K-3-2

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

09:30 〜 09:50

[K-3-2] Effect of 3D Current Distribution in the Characterizing Parasitic Resistance of FinFETs

^○P. Y. Lin¹, Y. L. Chiu¹, F. H. Meng¹, K. H. Chen², S. Hao², B. Z. Tien², T. S. Chang², C. J. Lin¹, Y. C. King¹ (1.National Tsing Hua Univ., 2.TSMC(Taiwan))

https://doi.org/10.7567/SSDM.2015.K-3-2

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