1⁄f Noise in Submicron Top-Gate Crystalline Oxide Semiconductor FET

A. Hirose

doi:https://doi.org/10.7567/SSDM.2015.K-5-2

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

5:45 PM - 6:05 PM

[K-5-2] 1⁄f Noise in Submicron Top-Gate Crystalline Oxide Semiconductor FET

^○A. Hirose¹, T. Aoki¹, S. Maeda¹, F. Akasawa¹, Y. Kurokawa¹, T. Ikeda¹, M. Tsubuku¹, T. Ishihara¹, Y. Kobayashi¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co. Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.K-5-2

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