Reliability of Improved CAAC-IGZO FET Satisfying NOSRAM Performance

T. Murakawa

doi:https://doi.org/10.7567/SSDM.2015.K-7-1

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

10:45 〜 11:05

[K-7-1] Reliability of Improved CAAC-IGZO FET Satisfying NOSRAM Performance

^○T. Murakawa¹, K. Ohshima¹, M. Tsubuku¹, D. Shimada¹, N. Kamata¹, T. Tanaka¹, A. Shimomura¹, M. Sakakura¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co. Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.K-7-1

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