16:50 〜 17:05

[M-2-3] AlGaN/GaN MOS-HFETs Exhibiting Improved Hysteresis in Transfer Characteristics with Recessed Gate Structures Formed by Selective Regrowth

^○S. Nakazawa¹, N. Shiozaki¹, N. Negoro¹, N. Tsurumi¹, Y. Anda¹, M. Ishida¹, T. Ueda¹ (1.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.M-2-3