17:05 〜 17:20

[M-2-4] MOS Characteristics on Homoepitaxial GaN Layer

^○S. Takashima¹, K. Ueno¹, H. Matsuyama¹, M. Edo¹, J. Suda², K. Nakagawa³ (1.Fuji Electric Co., Ltd., 2.Kyoto Univ., 3.Univ. of Yamanashi(Japan))

https://doi.org/10.7567/SSDM.2015.M-2-4