17:35 〜 17:50

[M-2-6] Fabrication and Characterization of AlTiO/InAlN/AlN/GaN Metal-Insulator-Semiconductor Field-Effect Transistor

^○S. Yamaguchi¹, T. Ui¹, J. Liang¹, H. A. Shih¹, T. Suzuki¹ (1.JAIST(Japan))

https://doi.org/10.7567/SSDM.2015.M-2-6