09:30 〜 09:45

[M-3-2] Development of Novel 1200V-Class 4H-SiC Implantation and Epitaxial Trench MOSFETs with Low On-resistance

^○H. Shiomi¹, H. Kitai¹, H. Tamaso¹, K. Fukuda¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.M-3-2