10:15 AM - 10:30 AM

[M-3-5] A Robust 600V GaN HEMT Technology on GaN-on-Si with 400V, 5μsec Load-Short-Circuit Withstand Capability

^○H. Ichijoh¹, T. Nagahisa¹, M. Kubo¹, A. O. Adan² (1.Sharp Corp., 2.Consultant(Japan))

https://doi.org/10.7567/SSDM.2015.M-3-5