Ideal Deep-Subthreshold Characteristics in C-Axis Aligned Crystalline Oxide Semiconductor FET

D. Matsubayashi

doi:https://doi.org/10.7567/SSDM.2015.M-6-3

09:30 〜 09:45

[M-6-3] Ideal Deep-Subthreshold Characteristics in C-Axis Aligned Crystalline Oxide Semiconductor FET

^○D. Matsubayashi¹, M. Tsubuku¹, T. Takeuchi¹, S. Matsuda¹, K. Ohshima¹, T. Tanaka¹, A. Shimomura¹, M. Sakakura¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.M-6-3

2015 International Conference on Solid State Devices and Materials

[M-6-3] Ideal Deep-Subthreshold Characteristics in C-Axis Aligned Crystalline Oxide Semiconductor FET