11:45 AM - 12:00 PM

[M-7-4] GaAs/In_0.2Ga_0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping

^○Q. Li¹, Y. Han¹, K. M. Lau¹ (1.Hong Kong Univ. of Sci. and Tech.(China))

https://doi.org/10.7567/SSDM.2015.M-7-4