16:05 〜 16:25

[N-2-1] Optimization of Extension Doping Condition of FinFETs for Ultra-Low-Power Applications

^○T. Matsukawa¹, Y. X. Liu¹, T. Mori¹, Y. Morita¹, S. O'uchi¹, H. Fuketa¹, S. Otsuka¹, S. Migita¹, M. Masahara¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.N-2-1