The Japan Society of Applied Physics

09:00 〜 09:30

[N-3-1] (Invited) High Performance Poly-Ge p- and nMOSFETs Fabricated by Flash Lamp Annealing

K. Usuda1,2, Y. Kamata1,2, Y. Kamimuta1,2, M. Koike1,2, T. Mori2,3, T. Maeda2,3, T. Tezuka1,2 (1.Toshiba Corp., 2.GNC-AIST, 3.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.N-3-1