09:00 〜 09:30

[N-3-1] (Invited) High Performance Poly-Ge p- and nMOSFETs Fabricated by Flash Lamp Annealing

^○K. Usuda^1,2, Y. Kamata^1,2, Y. Kamimuta^1,2, M. Koike^1,2, T. Mori^2,3, T. Maeda^2,3, T. Tezuka^1,2 (1.Toshiba Corp., 2.GNC-AIST, 3.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.N-3-1