17:55 〜 18:15

[N-5-2] Impact of La₂O₃ Interfacial Layers on InGaAs MOS Interface Properties in ALD Al₂O₃/La₂O₃/InGaAs Gate Stacks

^○C. Y. Chang^1,2, M. Takenaka^1,2, S. Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2015.N-5-2