18:35 〜 18:55

[N-5-4] High Mobility N-MOSFETs on GeSn Film Formed by Solid Phase Epitaxy with Surface Passivation by Oxygen Plasma Treatment

Y. H. Wu¹, ^○C. C. Su¹, Y. C. Fang¹, C. H. Hsieh¹ (1.National Tsing Hua Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.N-5-4