A 32-kb Embedded SRAM Using 60-nm Crystalline Oxide Semiconductor Transistors and Power Gating with 45-ns 144-fJ/bit Data Backup

W. Uesugi

doi:https://doi.org/10.7567/SSDM.2015.O-1-3

2:50 PM - 3:10 PM

[O-1-3] A 32-kb Embedded SRAM Using 60-nm Crystalline Oxide Semiconductor Transistors and Power Gating with 45-ns 144-fJ/bit Data Backup

^○W. Uesugi¹, T. Ishizu¹, K. Kato¹, T. Onuki¹, H. Tamura¹, A. Isobe¹, N. Tsutsui¹, Y. Suzuki¹, Y. Okazaki¹, M. Fujita², J. Koyama¹, Y. Yamamoto¹, YamazakiS. ¹ (1.Semiconductor Energy Laboratory Co., Ltd., 2.VLSI Design and Edu. Center, Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2015.O-1-3

2015 International Conference on Solid State Devices and Materials

[O-1-3] A 32-kb Embedded SRAM Using 60-nm Crystalline Oxide Semiconductor Transistors and Power Gating with 45-ns 144-fJ/bit Data Backup