180-mV Subthreshold Operation of Crystalline Oxide Semiconductor FPGA Realized by Overdriving Programmable Power Switch and Programmable Routing Switch<br />

M. Kozuma

doi:https://doi.org/10.7567/SSDM.2015.O-4-3

16:30 〜 16:50

[O-4-3] 180-mV Subthreshold Operation of Crystalline Oxide Semiconductor FPGA Realized by Overdriving Programmable Power Switch and Programmable Routing Switch

^○M. Kozuma¹, Y. Okamoto¹, T. Nakagawa¹, T. Aoki¹, Y. Kurokawa¹, T. Ikeda¹, Y. Ieda¹, N. Yamade¹, H. Miyairi¹, M. Ikeda², M. Fujita², S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd., 2.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2015.O-4-3

2015 International Conference on Solid State Devices and Materials

[O-4-3] 180-mV Subthreshold Operation of Crystalline Oxide Semiconductor FPGA Realized by Overdriving Programmable Power Switch and Programmable Routing Switch