Interface Engineered HfO<sub>2</sub>-Based 3D Vertical Resistive Random Access Memory with Forming-Free Operation

B. Hudec

doi:https://doi.org/10.7567/SSDM.2015.O-7-2

11:05 〜 11:25

[O-7-2] Interface Engineered HfO₂-Based 3D Vertical Resistive Random Access Memory with Forming-Free Operation

^○B. Hudec¹, I. T. Wang¹, W. L. Lai¹, C. C. Zhang¹, T. H. Hou¹, P. Jancovic², K. Frohlich², M. Micusik², M. Omastova² (1.National Chiao Tung Univ., 2.Slovak Academy of Sciences(Taiwan))

https://doi.org/10.7567/SSDM.2015.O-7-2

2015 International Conference on Solid State Devices and Materials

[O-7-2] Interface Engineered HfO2-Based 3D Vertical Resistive Random Access Memory with Forming-Free Operation

[O-7-2] Interface Engineered HfO₂-Based 3D Vertical Resistive Random Access Memory with Forming-Free Operation