The Japan Society of Applied Physics

11:05 〜 11:25

[O-7-2] Interface Engineered HfO2-Based 3D Vertical Resistive Random Access Memory with Forming-Free Operation

B. Hudec1, I. T. Wang1, W. L. Lai1, C. C. Zhang1, T. H. Hou1, P. Jancovic2, K. Frohlich2, M. Micusik2, M. Omastova2 (1.National Chiao Tung Univ., 2.Slovak Academy of Sciences(Taiwan))

https://doi.org/10.7567/SSDM.2015.O-7-2