3:30 PM - 3:45 PM

[P-1-6] Highly Sensitive Magnetic Field Sensor Devices Based on Magnetic Tunnel Junctions with CoFeSiB Electrode

^○D. Kato¹, M. Oogane¹, K. Fujiwara¹, J. Jouno², H. Naganuma¹, H. Katsurada², Y. Ando¹ (1.Tohoku Univ., 2.KONICA MINOLTA, Inc.(Japan))

https://doi.org/10.7567/SSDM.2015.P-1-6