Low Interface Trap Density in In0.53Ga0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO2/ La2O3 High-κ Dielectrics

T. W. Lin

doi:https://doi.org/10.7567/SSDM.2015.PS-1-1

[PS-1-1] Low Interface Trap Density in In_0.53Ga_0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO₂/ La₂O₃ High-κ Dielectrics

T. W. Lin¹, ^○J. N. Yao¹, Y. C. Lin¹, K. C. Yang¹, W. H. Wu¹, K. Kakushima², J. S. Maa¹, E. Y. Chang¹, H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-1-1

2015 International Conference on Solid State Devices and Materials

[PS-1-1] Low Interface Trap Density in In0.53Ga0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO2/ La2O3 High-κ Dielectrics

[PS-1-1] Low Interface Trap Density in In_0.53Ga_0.47as Metal-Oxide-Semiconductor Capacitors with Molecular Beam Deposited HfO₂/ La₂O₃ High-κ Dielectrics