Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs

Y. Morita

doi:https://doi.org/10.7567/SSDM.2015.PS-1-13

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-1-13] Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs

^○Y. Morita¹, T. Mori¹, K. Fukuda¹, W. Mizubayashi¹, S. Migita¹, K. Endo¹, S. O'uchi¹, Y. X. Liu¹, M. Masahara¹, T. Matsukawa¹, H. Ota¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.PS-1-13

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