"Improving Performance of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N2/H2 Gases

Q. H. Luc

doi:https://doi.org/10.7567/SSDM.2015.PS-1-3

[PS-1-3] "Improving Performance of In_0.53Ga_0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N₂/H₂ Gases

^○Q. H. Luc¹, S. P. Cheng¹, J. H. Chen¹, G. Y. Lin¹, H. B. Do¹, P. C. Chang¹, G. W. Huang¹, K. M. Chen¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-1-3

2015 International Conference on Solid State Devices and Materials

[PS-1-3] "Improving Performance of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N2/H2 Gases

[PS-1-3] "Improving Performance of In_0.53Ga_0.47As Metal-Oxide-Semiconductor Field-Effect-Transistors using in situ Post Remote-Plasma Treatment with N₂/H₂ Gases