The Japan Society of Applied Physics

[PS-13-13] Top-Gated Epitaxial Bilayer MoSe2 Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage

M. Manfrini1, S. Sutar1, S. Brems1, P. Tsipas2, K. E. Aretouli2, E. Xenogiannopoulou2, A. Dimoulas2, A. C. Mocuta1, I. P. Radu1, A. Thean1 (1.IMEC, 2.NCSR Demokritos(Belgium))

https://doi.org/10.7567/SSDM.2015.PS-13-13