[PS-14-15] Trench-channel MOSFET using C-H Diamond Surface

^○T. Saito¹, M. Kobayashi¹, T. Yamada¹, D. Xu¹, Y. Kitabayashi¹, D. Matsumura¹, M. Inaba¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-14-15