The Japan Society of Applied Physics

[PS-14-5] Transport Characteristics of Minority Carriers in 4H-SiC/Si Heterojunction Bipolar Transistor Structures Fabricated by Surface Activated Bonding

J. Liang1, S. Shimizu1, S. Nishida1, N. Shigekawa1, M. Arai2 (1.Osaka City Univ., 2.New Japan Radio Co., Ltd(Japan))

https://doi.org/10.7567/SSDM.2015.PS-14-5