The Japan Society of Applied Physics

[PS-14-6] Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

H. Xu1,2, Q. Yang1, M. Zhao1, S. Wang1, Z. Jin1, X. Liu1, A. Chanthaphan2, Y. Cheng2, T. Hosoi2, T. Shimura2, H. Watanabe2 (1.Institute of Microelectronics, Chinese Academy of Sciences, 2.Osaka Univ.(China))

https://doi.org/10.7567/SSDM.2015.PS-14-6