[PS-14-7] Removal of Near-Interface Oxide Traps at SiO₂/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

^○H. Kajifusa¹, H. Hirai¹, Y. Fujino¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2015.PS-14-7