The Japan Society of Applied Physics

[PS-3-10] Impacts of Threshold Voltage Design for Monolithic 3D 6T SRAM with Si and InGaAs-n/Ge-p Devices considering Interlayer Coupling

K. C. Yu1, C. H. Yu1, V. P. H. Hu1, P. Su1, C. T. Chuang1 (1.National Chiao Tung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-3-10