The Japan Society of Applied Physics

[PS-3-12] Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy and Concentration Ion Implantation on Random Telegraph Noise

T. H. Kao1, S. J. Chang1, Y. K. Fang1, P. C. Huang1, Y. K. Su1, Y. J. Shen1, C. Y. Wu2, S. L. Wu2 (1.National Cheng Kung Univ., 2.Cheng Shiu Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-3-12